Description
BSM 35 GB 120 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Doubled diode area • Package with insulated metal base plate Type BSM 35 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2111-A70 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 280 W + 150 -55 … + 150 ≤ 0.44 ≤ 0.8 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis – Semiconductor Group 1 Mar-28-1996 BSM 35 GB 120 DN.
